Parameter Extraction for a New Analytical Model of the Short-channel Mos Transistor
نویسندگان
چکیده
An extraction method for the parameters of a new analytical model of the submicron MOS transistor for analog applications is presented. The stages which form the extraction process are detailed, along with an original parameter extractor created in Labview, which uses the Levenberg-Marquardt fitting algorithm. Also presented are the results of the fitting of the model to experimental curves obtained with measured data taken from real MOS transistors, as well as to theoretical curves generated with the EKV model.
منابع مشابه
Gate structural engineering of MOS-like junctionless Carbon nanotube field effect transistor (MOS-like J-CNTFET)
In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...
متن کاملGate structural engineering of MOS-like junctionless Carbon nanotube field effect transistor (MOS-like J-CNTFET)
In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...
متن کاملAn Efficient Parameter Extraction Methodology for the EKV MOST Model
This paper presents a new parameter extraction methodology, based on an accurate and continuous MOS model dedicated to low-voltage and low-current analog circuit design and simulation (EKV MOST Model). The extraction procedure provides the key parameters from the pinch-off versus gate voltage characteristic, measured at constant current from a device biased in moderate inversion. Unique paramet...
متن کاملA MOS Transistor Model for Mixed Analog-digital Circuit Design and Simulation
In the design cycle of complex integrated circuits, the compact device simulation models are the privileged vehicle of information between the foundry and the designer. Effective circuit design, particularly in the context of analog and mixed analog-digital circuits using silicon CMOS technology, requires a MOS transistor (MOST) circuit simulation model well adapted both to the technology and t...
متن کاملKharkov National University of Radioelectronics
The corrections of the methodology of power BJT and MOSFET transistor models parameter extraction taking into account the self heating effects are presented For BJT these corrections are included into VBIC model parameter extraction process. For MOSFET current generator connected to standard SPICE MOS model is proposed to take into account drain current growth with transistor temperature.
متن کامل